feb-20-2004 1 bf2030... silicon n-channel mosfet tetrode ? for low noise, high gain controlled input stages up to 1ghz ? operating voltage 5v eha07461 gnd g1 g2 drain agc hf input hf output +dc gg v g1 r esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! class 2 (2000v - 4000v) pin to pin h uman b ody m odel type package pin configuration marking bf2030 BF2030R bf2030w sot143 sot143r sot343 1= s 1= d 1= d 2=d 2=s 2=s 3=g2 3=g1 3=g1 4=g1 4=g2 4=g2 - - - - - - nds nds nd maximum ratings parameter symbol value unit drain-source voltage v ds 8 v continuous drain current i d 20 ma gate 1/ gate 2-source current i g1/2sm 10 gate 1 (external biasing) + v g1se 6 v total power dissipation t s 76 c, bf2030, BF2030R t s 94 c, bf2030w p tot 200 200 mw storage temperature t stg -55 ... 150 c channel temperature t ch 150
feb-20-2004 2 bf2030... thermal resistance parameter symbol value unit channel - soldering point 1) bf2030/ BF2030R bf2030w r thchs 370 280 k/w electrical characteristics parameter symbol values unit min. typ. max. dc characteristics drain-source breakdown voltage i d = 20 a, v g1s = 0 , v g2s = 0 v (br)ds 10 - - v gate1-source breakdown voltage + i g1s = 10 ma, v g2s = 0 , v ds = 0 + v (br)g1ss 6 - 15 gate2-source breakdown voltage + i g2s = 10 ma, v g1s = 0 , v ds = 0 + v (br)g2ss 6 - 15 gate1-source leakage current v g1s = 5 v, v g2s = 0 , v ds = 0 + i g1ss - - 50 na gate2-source leakage current v g2s = 5 v, v g1s = 0 , v ds = 0 + i g2ss - - 50 drain current v ds = 5 v, v g1s = 0 , v g2s = 4 v i dss - - 50 a drain-source current v ds = 5 v, v g2s = 4 v, r g1 = 100 k ? i dsx - 12 - ma gate1-source pinch-off voltage v ds = 5 v, v g2s = 4 v, i d = 20 a v g1s(p) 0.3 0.5 - v gate2-source pinch-off voltage v ds = 5 v, i d = 20 a v g2s(p) 0.3 0.6 - 1 for calculation of r thja please refer to application note thermal resistance
feb-20-2004 3 bf2030... electrical characteristics parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) forward transconductance v ds = 5 v, i d = 10 ma, v g2s = 4 v g fs 27 31 - ms gate1 input capacitance v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz c g1ss - 2.4 2.8 pf output capacitance v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz c dss - 1.3 - power gain v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 800 mhz g p 20 23 - db noise figure v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 800 mhz f - 1.5 2.2 db gain control range v ds = 5 v, v g2s = 4...0 v, f = 800 mhz ? g p 40 50 -
feb-20-2004 4 bf2030... total power dissipation p tot = ? ( t s ) bf2030, BF2030R 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 160 180 mw 220 p tot total power dissipation p tot = ? ( t s ) bf2030w 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 160 180 ma 220 p tot drain current i d = ? ( i g1 ) v g2s = 4v 0 10 20 30 40 50 60 70 80 a 100 i g1 0 2 4 6 8 10 12 14 16 18 20 22 24 ma 28 i d output characteristics i d = ? ( v ds ) v g2s = 4v v g1s = parameter 0 1 2 3 4 5 6 7 8 v 10 v ds 0 2 4 6 8 10 12 14 16 ma 20 i d 1.4v 1.3v 1.2v 1.1v 1v 0.8v
feb-20-2004 5 bf2030... gate 1 current i g1 = ? ( v g1s ) v ds = 5v v g2s = parameter 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v ds 0 15 30 45 60 75 90 105 120 135 150 165 180 a 210 i g1 4v 3.5v 3v 2.5v 2v gate 1 forward transconductance g fs = ? ( i d ) v ds = 5v, v g2s = parameter 0 4 8 12 16 20 24 ma 30 i d 0 5 10 15 20 25 30 ms 40 g fs 4v 3v 2.5v 2v drain current i d = ? ( v g1s ) v ds = 5v v g2s = parameter 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v 2 v g1s 0 2 4 6 8 10 12 14 16 18 20 22 24 ma 30 i d 4v 3v 2v 1.5v drain current i d = ? ( v gg ) v ds = 5v, v g2s = 4v, r g1 = 100k ? (connected to v gg , v gg =gate1 supply voltage) 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gg 0 1 2 3 4 5 6 7 8 9 10 11 ma 13 i d
feb-20-2004 6 bf2030... drain current i d = ? ( v gg ) v g2s = 4v r g1 = parameter in k ? 0 1 2 3 4 5 6 v 8 v gg = v ds 0 2 4 6 8 10 12 14 16 18 20 22 24 ma 28 i d 70 80 100 120
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